Global Flash Memory Breakthrough: 332-Layer 3D NAND Sets New Industry Benchmark

Kioxia/SanDisk Collaboration Reaches New Heights

Kioxia Corporation and Western Digital’s SanDisk have jointly developed the 10th generation BiCS 3D NAND flash memory, achieving world-leading specifications in:

• Stacking layers (332 layers)
• Storage density (36.4Gb/mm²)
• Interface speed (4800MT/s)

Technological Innovations

Adopting CBA (CMOS Bonded Array) wafer bonding technology inspired by Yangtze Memory’s Xtacking architecture, the new design separates CMOS control circuits from memory arrays for optimized performance.

Power Efficiency Advancements

The new PI-LTT (Precision Input – Low Temperature Transfer) technology reduces:

• Input power consumption: 10% reduction
• Output power consumption: 34% reduction

Roadmap to Exabyte Storage

SanDisk’s UltraQLC platform combines:

• 64-channel custom controller
• BICS 8 QLC 3D NAND
• Adaptive power management

Projected capacities:

• 2025: 256TB
• 2027: 512TB
• 2030: 1PB

Revolutionary Crystal Storage Technology

University of Chicago researchers achieved terabyte-scale storage in 1mm³ crystals using:

• Praseodymium-doped yttrium oxide substrates
• UV laser charge trapping
• Quantum-inspired binary encoding

Key breakthrough: Utilizing crystal defects as binary storage units with:

• Charged defects = 1
• Neutral defects = 0